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Diane Publishing Books
Benefit Analysis of IGBT Power Device Simulation Modeling: Final Report
Michael P. Gallaher & Sheila A. Martin. This study presents the results from a microeconomic impact assessment of the development of mathematical models for the design of insulated-gate bipolar transistor (IGBT) semiconductor power devices. Sections include: project objectives; motivation for NISTís involvement; NISTís contributions to mathematical modeling of IGBT power devices; overview of analysis approach; the IGBT supply chain; technical impacts of simulation modeling of IGBT devices; methodology for estimating economic impacts; analysis results; market barriers & the role of NIST. References. Charts & tables.
Trading Spaces: Behind the Scenes
Whoís in Control? Polar Politics & the Sensible Center
Rise of Life: The First 3.5 Billion Years
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