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Extracting Electron Densities in N-Type GaAs from Raman Spectra: Theory: A Reprint from the “Journal of Research of the National Institute of Standards and Technology”
Herbert S. Bennett (au)
Presents the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10 to the 16th cm -3 and 10 to the 19th cm -3. Compared to other theories, this theory is unique in two respects: (1) the many-body effects are treated self-consistently; and (2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q to the 2nd/alpha), where Q is the magnitude of the normalization wave vector and alpha is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. Illus.
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